Resonant tunneling diode pdf
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چکیده
منابع مشابه
A Third Order Harmonic Oscillator Based on Coupled Resonant Tunneling Diode Pair Oscillators
A third order harmonic oscillator has been proposed based on the resonant tunneling diode pair oscillators. This oscillator has significant advantages, good stability of the oscillation frequency against the load impedance change together with capability to output higher frequencies. Proper circuit operation has been demonstrated using circuit simulations. It has been also shown that the output...
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We present room temperature resonant tunneling of GaSb/AlAsSb double barrier resonant tunneling diodes with pseudomorphically grown prewell emitter structures comprising the ternary compound semiconductors GaInSb and GaAsSb. At room temperature, resonant tunneling is absent for diode structures without prewell emitters. The incorporation of Ga0.84In0.16Sb and GaAs0.05Sb0.95 prewell emitters lea...
متن کاملEnhanced electro-optic modulation by integration of non-radiative centers in a resonant tunneling light emitting diode
We create a reservoir of hole traps in a resonant tunneling light emitting diode by etching the p-type contact into an array of nanometer scale pillars. In the off state, the charge reservoir keeps the light output extremely low, even at relatively high currents. The device can be switched on to produce light by raising the electron emitter past a confined electron state allowing holes to escap...
متن کاملResonant-Tunneling Diode and its Application to Multi-GHz Analog-to-Digital Converters
Characteristic features of resonant-tunneling diode (RTD) and a goal of RTD-based IC technology are discussed. Our recent results on RTD-based analog-to-digital converters (ADCs) are then presented. These include designs of a 5-bit 10-GHz flash ADC and a bandpass continuous-time delta-sigma modulator with a center frequency of 500 MHz, which show high potential of RTD-based ultrahigh-speed circ...
متن کاملRole of interface roughness scattering in self-consistent resonant-tunneling-diode simulations
The effects of interface roughness scattering in a resonant-tunneling diode are examined with the selfconsistent Born and the multiple sequential scattering algorithm for various interface roughness correlation lengths. The effect of a self-consistent treatment of the scattering self-energies with the quantum charge and the electrostatic and exchange-correlation potentials is demonstrated. The ...
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تاریخ انتشار 2015